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參數(shù)資料
| 型號(hào)： | MRFE6P3300HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 445K |
| 代理商： | MRFE6P3300HR3 |
MRFE6P3300HR3
11
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2007
Initial Release of Data Sheet
1
Dec. 2008
Table 4, Dynamic Characteristics, corrected Ciss test condition to indicate AC stimulus on the VGS
connection versus the VDS connection, corrected Typ value from 106 to 1060 pF, p. 2
Fig. 1, Test Circuit Schematic, Z-list, changed Z4, Z5 from 1.013″ x 0.058″ Microstrip to 1.186″ x 0.058″
Microstrip; Z10, Z11 from 1.054
″ x 0.150″ Microstrip to 1.306″ x 0.150″ Microstrip; and Z19, Z20 from
0.165
″ x 0.339″ Microstrip to 0.339″ x 0.165″ Microstrip; also separated Z1 and Z18 into two lines in
Z-list, p. 3
Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
2
Dec. 2009
Data sheet revised to reflect part status change, removing MRFE6P3300HR5. Refer to PCN13420.
(See Rev. 1 data sheet for MRFE6P3300HR5.)
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| MRFE6P3300HR5 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6P9220HR3 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6S8046NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6P3300HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRFE6P3300HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 300W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6P9220HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6P9220HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S8046GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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