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參數(shù)資料
| 型號： | MRFE6P3300HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 445K |
| 代理商： | MRFE6P3300HR3 |
MRFE6P3300HR3
5
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
-10
-20
900
820
IRL
Gps
ACP-U
f, FREQUENCY (MHz)
Figure 3. Single-Carrier OFDM Broadband Performance
@ 60 Watts Avg.
890
880
870
860
850
840
830
21
20
-65
31
27
-50
-55
-60
η
D
,DRAIN
EFFICIENCY
(%)
ηD
18.5
18
17.5
17
20.5
19.5
19
29
25
-45
-5
-15
VDD = 32 Vdc, Pout = 60 W (Avg.)
IDQ = 1600 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
-20
-5
-15
900
820
IRL
Gps
ACP-U
f, FREQUENCY (MHz)
Figure 4. Single-Carrier OFDM Broadband Performance
@ 120 Watts Avg.
890
880
870
860
850
840
830
20.5
19
-60
44
40
-45
-50
-55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
17.5
17
16.5
19.5
18.5
18
42
38
-40
0
-10
Figure 5. Two-T one Power Gain versus
Output Power
21
1
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
20
19
100
600
G
ps
,POWER
GAIN
(dB)
18
1600 mA
10
1200 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
-2 0
-3 0
-4 0
-5 0
-6 0
10
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
-1 0
IDQ = 800 mA
2400 mA
1200 mA
1600 mA
VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
600
1
ACP-L
0
ACP-L
20
VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
2000 mA
VDD = 32 Vdc, Pout = 120 W (Avg.)
IDQ = 1600 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
16
17
800 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MRFE6P3300HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRFE6P3300HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 300W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6P9220HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6P9220HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S8046GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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