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參數(shù)資料
| 型號(hào)： | MRF9030D |
| 廠商： | Motorola, Inc. |
| 英文描述： | The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 該射頻亞微米MOSFET的線射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大小： | 549K |
| 代理商： | MRF9030D |
MRF9030LR1 MRF9030LSR1
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MOTOROLA RF DEVICE DATA
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
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specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
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Motorola was negligent regarding the design or manufacture of the part.
MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Motorola Inc. 2003
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852-26668334
HOME PAGE
: http://motorola.com/semiconductors
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF9030LR1 | The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9030LSR1 | The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9030MR1 | The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9060 | 4 MEGABIT 3.3 VOLT SERIAL CONFIGURATION |
| MRF9060R1 | 4 MEGABIT 3.3 VOLT SERIAL CONFIGURATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9030GMR1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF9030GNR1 | 功能描述:射頻MOSFET電源晶體管 30W RF PWR FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9030LR1 | 功能描述:射頻MOSFET電源晶體管 30W RF PWR FET NI-360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9030LR5 | 功能描述:射頻MOSFET電源晶體管 30W RF PWR FET NI-360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9030LSR1 | 功能描述:IC MOSFET RF N-CHAN NI-360S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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