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參數(shù)資料
| 型號： | MRF8S21200HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 5/14頁 |
| 文件大小： | 580K |
| 代理商： | MRF8S21200HR6 |
MRF8S21200HR6 MRF8S21200HSR6
13
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2009
Initial Release of Data Sheet
1
Nov. 2009
Removed Typical Pout @ 1 dB Compression Point bullet from p. 1, and P1dB from the Typical Performance
table, p. 3. P1dB was artificially low due to fixture tuning tradeoffs, i.e., fixture was tuned for back--off
linearity versus optimum P1dB.
2
Oct. 2010
Changed Human Body Model ESD rating from Class 1A to Class 2 to reflect recent ESD test results of the
device, p. 2.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF8S23120HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S23120HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S26060HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S26060HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S26120HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8S21200HR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8S21200HSR5 | 功能描述:射頻無線雜項(xiàng) HV8 2.1GHZ 48W NI1230HS RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| MRF8S21200HSR6 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 48W NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S23120H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8S23120HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.3GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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