參數(shù)資料
型號(hào)： MRF8S26060HSR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, CASE 465J-02, NI-400S-240, 2 PIN
文件頁(yè)數(shù)： 1/14頁(yè)
文件大?。?/td> 220K
代理商： MRF8S26060HSR3
MRF8S26060HR3 MRF8S26060HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies
from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
450 mA, Pout = 15.5 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
hD
(%)
Output PAR
(dB)
ACPR
(dBc)
2620 MHz
16.3
33.2
6.3
-37.2
2655 MHz
16.3
33.0
6.3
-37.7
2690 MHz
16.3
32.9
6.2
-37.1
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 78 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point ] 60 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76
°C, 15.5 W CW, 28 Vdc, IDQ = 450 mA, 2655 MHz
Case Temperature 80
°C, 60 W CW, 28 Vdc, IDQ = 450 mA, 2655 MHz
RθJC
1.0
0.90
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF8S26060H
Rev. 0, 4/2010
Freescale Semiconductor
Technical Data
2620-2690 MHz, 15.5 W AVG., 28 V
W-CDMA, LTE
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF8S26060HR3
MRF8S26060HSR3
CASE 465J-02, STYLE 1
NI-400S-240
MRF8S26060HSR3
CASE 465I-02, STYLE 1
NI-400-240
MRF8S26060HR3
Freescale Semiconductor, Inc., 2010. All rights reserved.
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