- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98041 > MRF8S19260HSR6 (FREESCALE SEMICONDUCTOR INC) 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF8S19260HSR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375J-02, NI-1230S-8, 8 PIN |
| 文件頁數(shù)： | 8/14頁 |
| 文件大小： | 483K |
| 代理商： | MRF8S19260HSR6 |
MRF8S19260HR6 MRF8S19260HSR6
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ = 1600 mA, 1930--1990 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
245
—
W
IMD Symmetry @ 220 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc (Delta IMD Third Order Intermodulation
between Upper and Lower Sidebands > 2 dB)
IMDsym
—
15
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
75
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout =74 W Avg.
GF
—
0.6
—
dB
Gain Variation over Temperature
(--30°Cto+85°C)
G
—
0.014
—
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C) (1)
P1dB
—
0.011
—
dBm/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF8S21100HR5 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S21100HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S21100HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S21120HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF8S21140HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8S21100HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 100W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21100HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 100W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 100W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21100HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 100W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21120HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。