參數(shù)資料
型號: MRF8S19260HSR6
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CASE 375J-02, NI-1230S-8, 8 PIN
文件頁數(shù): 7/14頁
文件大?。?/td> 483K
代理商: MRF8S19260HSR6
2
RF Device Data
Freescale Semiconductor
MRF8S19260HR6 MRF8S19260HSR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =30 Vdc, VGS =0 Vdc)
IDSS
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 400 μAdc)
VGS(th)
1.1
1.8
2.6
Vdc
Gate Quiescent Voltage
(VDS =30 Vdc, ID = 1600 mAdc)
VGS(Q)
3.1
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD =30 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGG(Q)
4.5
5.2
6.0
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =4.0 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ = 1600 mA, Pout = 74 W Avg., f = 1990 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
16.5
18.2
19.5
dB
Drain Efficiency
ηD
32.0
34.5
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.2
5.7
dB
Adjacent Channel Power Ratio
ACPR
--34.6
--31.5
dBc
Input Return Loss
IRL
--13
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ = 1600 mA, Pout =74 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1930 MHz
17.6
33.2
5.9
--36.0
--9
1960 MHz
18.0
33.6
5.8
--35.7
--11
1990 MHz
18.2
34.5
5.7
--34.6
--13
1. VGG =1.6 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
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