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參數(shù)資料
| 型號： | MRF859S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 155K |
| 代理商： | MRF859S |
MRF859 MRF859S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1 A, VCE = 5 V)
hFE
20
60
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Cob
13
—
26
pF
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.9 A, f = 840–900 MHz, Pout = 6.5 W)
Pg
11.5
13
—
dB
Load Mismatch
(VCE = 24 V, IC = 0.9 A, f = 840 MHz, Pout = 6.5 W,
Load VSWR = 30:1, All Phase Angles)
ψ
No Degradation in
Output Power
RF Input Overdrive
(VCE = 24 V, IC = 0.9 A, f = 840 MHz)
No degradation
Pin(over)
—
—
2
W
Third Order Intercept Point
(VCE = 24 V, IC = 0.9 A, f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = –40 dBc)
ITO
+47
+48
—
dBm
Noise Figure
(VCE = 24 V, IC = 0.9 A, f = 900 MHz)
NF
—
6
—
dB
Input Return Loss
(VCE = 24 V, IC = 0.9 A, f = 840–900 MHz, Pout = 6.5 W)
IRL
—
—
–9
dB
Table 1. Common Emitter S–Parameters
(V)
(A)
f
(MHz)
S11
S21
S12
S22
VCE
IC
|S11|
0.906
0.902
0.897
0.894
0.893
0.893
0.894
0.897
0.903
∠
φ
|S21|
1.022
1.022
1.018
1.012
1.005
0.988
0.962
0.924
0.884
∠
φ
|S12|
0.016
0.015
0.013
0.011
0.009
0.007
0.005
0.008
0.004
∠
φ
|S22|
0.804
0.823
0.845
0.870
0.895
0.920
0.946
0.969
0.987
∠
φ
24
0.9
800
820
840
860
880
900
920
940
960
170
170
171
171
171
171
172
172
172
12
7
3
–3
–8
–14
–20
–26
–32
11
8
6
4
3
5
14
47
102
–168
–167
–167
–167
–168
–168
–169
–170
–172
Table 2. Zin and ZOL* versus Frequency
f
(MHz)
Zin
(Ohms)
ZOL*
(Ohms)
840
870
900
1.6
1.5
2.2
3.3
3.6
3.5
2
1.6
1.7
–4.1
–3.3
–2.7
VCE = 24 V, IC = 0.9 A, Po = 6.5 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
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