參數(shù)資料
型號(hào)： MRF897R
廠商： MOTOROLA INC
元件分類(lèi)： 功率晶體管
英文描述： RF POWER TRANSISTOR NPN SILICON
中文描述： 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CASE 395E-01, 5 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 172K
代理商： MRF897R
1
MRF897R
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF Line
Designed for 24 Volt UHF large–signal, common emitter, class–AB linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800–970 MHz.
Specified 24 Volt, 900 MHz Characteristics
Output Power = 30 Watts
Minimum Gain = 10.5 dB @ 900 MHz, class–AB
Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)
Maximum Intermodulation Distortion –30 dBc @ 30 Watts (PEP)
Characterized with Series Equivalent Large–Signal Parameters from 800
to 960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, and Rated Output Power
Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal–
Migration
Circuit Board Photomaster Available by Ordering Document
MRF897RPHT/D from Motorola Literature Distribution.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
30
Vdc
Collector–Emitter Voltage
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector–Current — Continuous
4.0
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
105
0.60
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.67
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 5 mAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25
°
C)
ON CHARACTERISTICS
DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
30
33
—
Vdc
60
80
—
Vdc
4.0
4.7
—
Vdc
—
—
10.0
mAdc
hFE
30
80
120
—
Cob
14
21
28
pF
(continued)
Order this document
by MRF897R/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 900 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 395B–01, STYLE 1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF898 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN RF POWER TRANSISTOR
MRF899 制造商:Motorola Inc 功能描述:
MRF89XA-I/MQ 功能描述:射頻收發(fā)器 868/915/950 MHz Sub-GHz Trans RoHS:否 制造商:Atmel 頻率范圍:2322 MHz to 2527 MHz 最大數(shù)據(jù)速率:2000 Kbps 調(diào)制格式:OQPSK 輸出功率:4 dBm 類(lèi)型: 工作電源電壓:1.8 V to 3.6 V 最大工作溫度:+ 85 C 接口類(lèi)型:SPI 封裝 / 箱體:QFN-32 封裝:Tray
MRF89XAM8A-I 制造商:MICROCHIP 制造商全稱(chēng):Microchip Technology 功能描述:Ultra Low-Power, Integrated ISM Band Sub-GHz Transceiver
MRF89XAM8A-I/RM 功能描述:射頻模塊 868MHz Sub-GHz transceiver module RoHS:否 制造商:Linx Technologies 產(chǎn)品:Transceiver Modules 頻帶:902 MHz to 928 MHz 輸出功率:- 15.5 dBm to + 12.5 dBm 接口類(lèi)型:UART 工作電源電壓:- 0.3 VDC to + 5.5 VDC 傳輸供電電流:38.1 mA 接收供電電流:22.7 mA 天線連接器類(lèi)型:U.FL 最大工作溫度:+ 85 C 尺寸:1.15 mm x 0.63 mm x 0.131 mm
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