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參數(shù)資料
| 型號： | MRF899 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 375A-01, 5 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 204K |
| 代理商： | MRF899 |
1
MRF899
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for 26 Volt UHF large–signal, common emitter, Class AB linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800–960 MHz.
Specified 26 Volt, 900 MHz Characteristics
Output Power = 150 Watts (PEP)
Minimum Gain = 8.0 dB @ 900 MHz, Class AB
Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP)
Maximum Intermodulation Distortion –28 dBc @ 150 Watts (PEP)
Characterized with Series Equivalent Large–Signal Parameters from 800
to 960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, and Rated Output Power
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
28
Vdc
Collector–Emitter Voltage
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector–Current — Continuous
25
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
230
1.33
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.75
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)
(1) For information only. This part is collector matched.
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
28
37
—
Vdc
60
85
—
Vdc
4.0
4.9
—
Vdc
—
—
10
mAdc
hFE
30
75
120
—
Cob
—
75
—
pF
(continued)
Order this document
by MRF899/D
SEMICONDUCTOR TECHNICAL DATA
150 W, 900 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 375A–01, STYLE 1
REV 7
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