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參數(shù)資料
| 型號： | MRF859S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 155K |
| 代理商： | MRF859S |
1
MRF859 MRF859S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF Line
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800 to 960 MHz.
Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics
Output Power = 6.5 Watts CW
Minimum Power Gain = 11.5 dB
Minimum ITO = +47 dBm
Typical Noise Figure = 6 dB
Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800 to 960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.9 Adc and Rated Output Power
Will Withstand RF Input Overdrive of 2 W CW
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit Board Photomaster Available by Ordering Document MRF859PHT/D
from Motorola Literature Distribution.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PD
30
Vdc
Collector–Base Voltage
55
Vdc
Emitter–Base Voltage
4
Vdc
Total Device Dissipation @ TC = 60
°
C
Derate above 60
°
C
34
0.24
Watts
W/
°
C
Operating Junction Temperature
TJ
Tstg
200
°
C
Storage Temperature Range
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance (TJ = 150
°
C, TC = 60
°
C)
R
θ
JC
3.9
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0)
Collector Cutoff Current (VCB = 15 V, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
28
32
—
Vdc
55
75
—
Vdc
55
75
—
Vdc
4
5
—
Vdc
—
—
2
mA
(continued)
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Order this document
by MRF859/D
SEMICONDUCTOR TECHNICAL DATA
CLASS A
800–960 MHz
6.5 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 319–07, STYLE 2
MRF859
CASE 319A–02, STYLE 2
MRF859S
REV 2
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