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參數(shù)資料
| 型號： | MRF6V2300NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB, 4 PIN |
| 文件頁數(shù)： | 15/19頁 |
| 文件大小： | 1185K |
| 代理商： | MRF6V2300NR1 |
MRF6V2300NR1 MRF6V2300NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
1
100
1
TC =25°C
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
40
0
10
0
DRAIN VOLTAGE (VOLTS)
9
8
7
6
20
120
Figure 6. DC Drain Current versus Drain Voltage
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
60
600
22
28
IDQ = 1350 mA
10
26
25
24
Pout, OUTPUT POWER (WATTS) CW
Figure 7. CW Power Gain versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
VDD =50 Vdc
f1 = 220 MHz
100
10
40
100
27
5
VGS =3 V
Coss
Crss
80
100
4
3
2
1
2.75 V
2.63 V
2.5 V
2.25 V
23
100
1125 mA
900 mA
650 mA
450 mA
100
--55
--15
1
Pout, OUTPUT POWER (WATTS) PEP
--25
--30
--35
--40
10
600
Figure 8. Third Order Intermodulation Distortion
versus Output Power
IM
D,
TH
IRD
O
RDE
R
INT
ER
M
O
DULA
TIO
N
DI
ST
OR
TION
(d
Bc)
VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
Two--Tone Measurements, 100 kHz Tone Spacing
--45
--50
--20
IDQ = 450 mA
1350 mA
900 mA
650 mA
1125 mA
34
50
60
24
28
26
58
56
54
52
Pin, INPUT POWER (dBm)
Figure 9. CW Output Power versus Input Power
P out
,O
UT
PU
T
POWER
(d
Bm)
30
32
P3dB = 55.76 dBm (377 W)
Actual
Ideal
P1dB = 55.04 dBm (319 W)
VDD =50 Vdc,IDQ = 900 mA
f = 220 MHz
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V2300NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2300NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2300N Series 10 - 600 MHz 300 W 50 V N-Channel Single-Ended RF Power MOSFET |
| MRF6V2300NR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W TO270WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V3090NBR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 860MHz 90W TO 272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V3090NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 860MHz 90W TO 272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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