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參數(shù)資料
| 型號(hào)： | MRF6V2300NR1 |
| 廠(chǎng)商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB, 4 PIN |
| 文件頁(yè)數(shù)： | 10/19頁(yè) |
| 文件大小： | 1185K |
| 代理商： | MRF6V2300NR1 |
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18
RF Device Data
Freescale Semiconductor
MRF6V2300NR1 MRF6V2300NBR1
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Feb. 2007
Initial Release of Data Sheet
1
Feb. 2007
Added Fig. 1, Pin Connections, p. 1
Removed footnote references listed for Operating Junction Temperature, Table 1, Maximum Ratings, p. 1
Added Max value to Power Gain, Table 5, Functional Tests, p. 2
2
May 2007
Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4,
C19, C5, C18, C9, C12, C14, and C23, p. 3
3
Jan. 2008
Increased operating frequency to 600 MHz, p. 1
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3
Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 9--11. Added pin numbers 1 through 4
on Sheet 1.
Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 12--14. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
4
Dec. 2008
Added Typical Performances table for 27 MHz, 450 MHz applications, p. 2
Added Figs. 16 and 17, Test Circuit Component Layout -- 27 MHz and 450 MHz, and Tables 7 and 8, Test
Circuit Component Designations and Values -- 27 MHz and 450 MHz, p. 9, 10
Added Fig. 18, Series Equivalent Source and Load Impedance for 27 MHz, 450 MHz, p. 11
5
Apr. 2010
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 18
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6V3090NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6V3090NR5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6V3090NBR5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6V4300NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6V4300NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V2300NR1_08 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2300NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2300N Series 10 - 600 MHz 300 W 50 V N-Channel Single-Ended RF Power MOSFET |
| MRF6V2300NR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W TO270WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V3090NBR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 860MHz 90W TO 272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V3090NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 860MHz 90W TO 272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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