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參數(shù)資料
| 型號： | MRF6V2300NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB, 4 PIN |
| 文件頁數(shù)： | 12/19頁 |
| 文件大?。?/td> | 1185K |
| 代理商： | MRF6V2300NR1 |
2
RF Device Data
Freescale Semiconductor
MRF6V2300NR1 MRF6V2300NBR1
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
—
2.5
mA
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
50
μAdc
Drain--Source Breakdown Voltage
(ID = 150 mA, VGS =0 Vdc)
V(BR)DSS
110
—
Vdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 800 μAdc)
VGS(th)
1
1.63
3
Vdc
Gate Quiescent Voltage
(VDD =50 Vdc, ID = 900 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.6
3.5
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =2 Adc)
VDS(on)
—
0.28
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
2.88
—
pF
Output Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
120
—
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
268
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 220 MHz, CW
Power Gain
Gps
24
25.5
27
dB
Drain Efficiency
ηD
66
68
—
%
Input Return Loss
IRL
—
--16
--9
dB
Typical Performances (In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) VDD =50 Vdc, IDQ = 900 mA, Pout = 300 W CW
Power Gain
f = 27 MHz
f = 450 MHz
Gps
—
31.4
21.7
—
dB
Drain Efficiency
f = 27 MHz
f = 450 MHz
ηD
—
61.5
59.1
—
%
Input Return Loss
f = 27 MHz
f = 450 MHz
IRL
—
--17.4
--24.4
—
dB
ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V2300NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2300NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2300N Series 10 - 600 MHz 300 W 50 V N-Channel Single-Ended RF Power MOSFET |
| MRF6V2300NR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 300W TO270WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V3090NBR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 860MHz 90W TO 272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V3090NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 860MHz 90W TO 272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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