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參數(shù)資料
| 型號(hào)： | MRF6V14300HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 2 PIN |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 637K |
| 代理商： | MRF6V14300HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF6V14300HR3 MRF6V14300HSR3
TYPICAL CHARACTERISTICS
6
0
400
0
25_C
85_C
3
1
200
100
Pin, INPUT POWER (WATTS) PULSED
Figure 9. Pulsed Output Power versus
Input Power
P out
,O
UT
PU
T
POWER
(W
ATTS)
PU
LSED
24
300
5
TC =--30_C
VDD =50 Vdc,IDQ = 150 mA, f = 1400 MHz
Pulse Width = 300 μsec, Duty Cycle = 12%
16
24
50
22
70
100
58
46
Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
22
400
25_C
TC =--30_C
85_C
34
20
18
55_C
VDD =50 Vdc,IDQ = 150 mA, f = 1400 MHz
Pulse Width = 300 μsec, Duty Cycle = 12%
Gps
--30_C
25_C
55_C
85_C
Figure 11. Broadband Performance @ Pout = 330 Watts Peak
9
19
1200
f, FREQUENCY (MHz)
15
13
1225
17
1250
1275
1300
1325
1350
1375
1400
--25
63
62
60
0
--5
11
G
ps
,P
OWER
GAIN
(d
B)
10
12
14
16
18
61
59
--10
--15
--20
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
IRL,
INPUT
RET
URN
LO
SS
(d
B)
VDD =50 Vdc,IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.)
Pulse Width = 300 μsec, Duty Cycle = 12%
Gps
ηD
IRL
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 330 W Peak, Pulse Width = 300 μsec,
Duty Cycle = 12%, and ηD = 60.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110
130
150
170
190
MTTF
(H
OU
RS
)
210
230
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V14300HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 1400MHZ 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V14300MSR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF6V2010GNR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2010GNR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2010N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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