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參數(shù)資料
| 型號： | MRF6V14300HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 2 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 637K |
| 代理商： | MRF6V14300HSR3 |
2
RF Device Data
Freescale Semiconductor
MRF6V14300HR3 MRF6V14300HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
10
μAdc
Drain--Source Breakdown Voltage
(VGS =0 Vdc, ID = 100 mA)
V(BR)DSS
100
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
50
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =90 Vdc, VGS =0 Vdc)
IDSS
—
2.5
mA
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 662 μAdc)
VGS(th)
0.9
1.6
2.4
Vdc
Gate Quiescent Voltage
(VDD =50 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.4
3
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =1.63 Adc)
VDS(on)
—
0.26
—
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
0.6
—
pF
Output Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
350
—
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
330
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.), f = 1400 MHz,
Pulsed, 300 μsec Pulse Width, 12% Duty Cycle
Power Gain
Gps
16.5
18
19.5
dB
Drain Efficiency
ηD
59(2)
60.5(2)
—
%
Input Return Loss
IRL
—
--12
--9
dB
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 330 W Peak
(39.6 W Avg.), f1 = 1200 MHz, f2 = 1300 MHz and f3 = 1400 MHz, Pulsed, 300 μsec Pulse Width, 12% Duty Cycle, tr =50 ns
Relative Insertion Phase
|Φ|
—
10
—
°
Gain Flatness
GF
—
0.5
—
dB
Pulse Amplitude Droop
Drp
—
0.3
—
dB
Harmonic 2nd and 3rd
H2 & H3
—
--20
—
dBc
Spurious Response
—
--65
—
dBc
Load Mismatch Stability
(VSWR = 3:1 at all Phase Angles)
VSWR--S
All Spurs Below --60 dBc
Load Mismatch Tolerance
(VSWR = 5:1 at all Phase Angles)
VSWR--T
No Degradation in Output Power
1. Part internally matched both on input and output.
2. Drain efficiency is calculated by: η
D =
100 × Pout
VDD × Ipeak
where: Ipeak =(IAVG -- IDQ) / Duty Cycle (%) + IDQ.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V14300HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 1400MHZ 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V14300MSR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF6V2010GNR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2010GNR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2010N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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