- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96053 > MRF6V14300HSR3 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF6V14300HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 2 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 637K |
| 代理商： | MRF6V14300HSR3 |
MRF6V14300HR3 MRF6V14300HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
0.1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
0
160
0
VDD =50 Vdc,IDQ = 150 mA
f = 1200 MHz, Pulse Width = 300 μsec
4
100
DUTY CYCLE (%)
Figure 4. Safe Operating Area
MAXIMU
M
O
PER
AT
IN
G
T case
(°
C)
10
1
40
10
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
100
24
50
25
100
22
20
65
55
45
35
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
16
400
Gps
47
59
27
55
54
53
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
56
52
51
50
49
29
31
33
35
37
39
P out
,O
UT
PU
T
POWER
(d
Bm)
P3dB = 55.30 dBm (339 W)
Actual
Ideal
P1dB = 54.77 dBm (300 W)
17
22
50
21
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
100
20
IDQ = 600 mA
400
450 mA
Figure 8. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
VDD =30 V
15
22
50
16
21
35 V
20
45 V
100
400
50 V
48
18
19
18
300 mA
150 mA
19
18
17
VDD =50 Vdc,IDQ = 150 mA, f = 1400 MHz
Pulse Width = 300 μsec, Duty Cycle = 12%
IDQ = 150 mA, f = 1400 MHz
Pulse Width = 300 μsec
Duty Cycle = 12%
40 V
VDD =50 Vdc,IDQ = 150 mA, f = 1400 MHz
Pulse Width = 300 μsec, Duty Cycle = 12%
VDD = 50 Vdc, f = 1400 MHz
Pulse Width = 300 μsec, Duty Cycle = 12%
20
57
58
140
120
80
60
40
20
28
612
14
16
18
Pout = 330 W
Pout = 270 W
Pout = 300 W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6V2010NB | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF6V2010NBR5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF750 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF752 | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF8372R2 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V14300HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 1400MHZ 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V14300MSR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF6V2010GNR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2010GNR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2010N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。