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| 型號(hào)： | MRF6S18100NBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN |
| 文件頁(yè)數(shù)： | 3/21頁(yè) |
| 文件大?。?/td> | 764K |
| 代理商： | MRF6S18100NBR1 |
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MRF6S18100NR1 MRF6S18100NBR1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 1805-1880 MHz
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
f, FREQUENCY (MHz)
12
1800
20
Gps
VDD = 28 Vdc
IDQ = 900 mA
17
60
50
40
30
1880
IRL
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 100 Watts
30
0
10
20
40
η
D
,DRAIN
EFFICIENCY
(%)
16
15
14
ηD
1810
1820
1830
1840
1850
13
1860
1870
1800
1880
1810
1820
1830
1840
1850
1860
1870
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
f, FREQUENCY (MHz)
13
20
Gps
VDD = 28 Vdc
IDQ = 900 mA
16
50
40
30
IRL
Figure 19. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 40 Watts
30
10
20
40
η
D
,DRAIN
EFFICIENCY
(%)
15
14
ηD
Figure 20. EVM versus Frequency
f, FREQUENCY (MHz)
Pout = 60 W Avg.
42 W Avg.
25 W Avg.
VDD = 28 Vdc
IDQ = 700 mA
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
1900
1
6
3
1880
1860
1840
1800
4
2
5
1820
Figure 21. EVM and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) AVG.
100
4
10
VDD = 28 Vdc
IDQ = 700 mA
f = 1840 MHz
EDGE Modulation
8
6
0
10
1
2
20
50
40
30
0
10
η
D
,DRAIN
EFFICIENCY
(%)
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
TC = 25_C
ηD
EVM
10
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| MRF6S18100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
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| MRF6S18140HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S19060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S18100NR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S18100NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18140HR3 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S18140HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18140HR5 | 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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