參數(shù)資料
型號(hào)： MRF6S18100NBR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝： ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN
文件頁數(shù)： 17/21頁
文件大?。?/td> 764K
代理商： MRF6S18100NBR1
MRF6S18100NR1 MRF6S18100NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 1930-1990 MHz
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
f, FREQUENCY (MHz)
13
1900
20
Gps
VDD = 28 Vdc
IDQ = 900 mA
17
60
50
40
30
2020
IRL
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 100 Watts
30
0
10
20
40
η
D
,DRAIN
EFFICIENCY
(%)
16
15
14
ηD
1920
1940
1960
1980
2000
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
f, FREQUENCY (MHz)
13
1900
20
Gps
VDD = 28 Vdc
IDQ = 900 mA
17
60
50
40
30
2020
IRL
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 40 Watts
30
0
10
20
40
η
D
,DRAIN
EFFICIENCY
(%)
16
15
14
ηD
1920
1940
1960
1980
2000
Figure 5. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
VDD = 28 Vdc
f = 1960 MHz
1125 mA
IDQ = 1350 mA
10
11
1
16
14
13
12
100
G
ps
,POWER
GAIN
(dB)
15
900 mA
665 mA
450 mA
40
2
0
16
12
10
6
4
20
160
60
80
Figure 6. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD = 24 V
28 V
IDQ = 900 mA
f = 1960 MHz
G
ps
,POWER
GAIN
(dB)
32 V
14
8
100
120
140
相關(guān)PDF資料
PDF描述
MRF6S18100NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S18140HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S18140HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6S19060NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S19060NBR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S18100NR1 功能描述:射頻MOSFET電源晶體管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18100NR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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