- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96053 > MRF6P24190HR6 (FREESCALE SEMICONDUCTOR INC) 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF6P24190HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 365K |
| 代理商： | MRF6P24190HR6 |
8
RF Device Data
Freescale Semiconductor
MRF6P24190HR6
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Dec. 2006
Initial Release of Data Sheet
1
Mar. 2007
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
Added maximum CW operation limitation and derating values to the Maximum Rating table to prevent a
200°C+ hot wire operating condition, p. 1
Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
Added frequency to title of schematic, component part layout and typical characteristic curves, p. 3-5
Added Fig. 6, MTTF versus Junction Temperature graph, p. 5
2
Apr. 2008
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
3
Feb. 2009
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6S24140HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V10010NR4 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V10250HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V14300HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V2010NB | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。