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參數(shù)資料
| 型號： | MRF6P24190HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 365K |
| 代理商： | MRF6P24190HR6 |
MRF6P24190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 2450 MHz
G
ps
,POWER
GAIN
(dB)
500
10
50
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power
IDQ = 1900 mA
f = 2450 MHz
VDD = 12 V
100
40
30
20
10.5
14.5
14
13
12
η
D
,DRAIN
EFFICIENCY
(%)
ηD
32 V
30 V
32 V
30 V
28 V
13.5
12.5
11.5
11
45
35
25
15
G
ps
,POWER
GAIN
(dB)
300
10
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 V
f = 2450 MHz
100
10.5
14.5
14
13
12
13.5
12.5
11.5
11
1500 mA
1600 mA
2100 mA
2200 mA
1900 mA
G
ps
,POWER
GAIN
(dB)
10
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 V
IDQ = 1900 mA
f = 2450 MHz
100
40
30
20
10.5
14.5
14
13
12
η
D
,DRAIN
EFFICIENCY
(%)
ηD
13.5
12.5
11.5
11
45
35
25
15
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 190 W CW, and ηD = 46.2%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110
130
150
170
190
MTTF
(HOURS)
210
230
105
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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