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參數(shù)資料
| 型號(hào)： | MRF6522-10R1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-200Z, CASE 458C-03, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 268K |
| 代理商： | MRF6522-10R1 |
LIFETIME
BUY
LAST
ORDER
31JUL04
LAST
SHIP
31JAN05
1
MRF6522–10R1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for Class A–AB common source, linear power amplifiers in the
960 MHz range. The MRF6522–10R1 has been specifically designed for use
in Communications Network (GSM) base stations. The package offers the
advantage of SMD.
Specified 26 Volts, 960 MHz, Class AB Characteristics
Output Power = 10 Watts CW
Power Gain = 15 dB Min @ 960 MHz, 10 Watts CW
Drain Efficiency = 48% Min @ 960 MHz, 10 Watts CW
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Bottom Side Source Eliminates DC Isolators,
Reducing Common Mode Inductances
In Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
29
0.17
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
RθJC
4.0
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.2 mA)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1.0
Adc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
—
1.0
Adc
(1) Thermal resistance is determined under specified RF operating condition.
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF6522–10/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF6522-10R1
960 MHz, 10 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 458C–03, STYLE 1
NI–200Z
Motorola, Inc. 2002
G
D
S
REV 2
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