參數(shù)資料
型號： MRF581
廠商： MOTOROLA INC
元件分類： 小信號晶體管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁數(shù)： 3/10頁
文件大?。?/td> 160K
代理商： MRF581
MRF581 MRF5812R1, R2
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
MRF581
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
18
15
—
Vdc
Collector–Emitter Breakdown Voltage
MRF5812
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
15
—
Vdc
Collector–Emitter Breakdown Voltage
MRF5812
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
30
—
Vdc
Collector–Base Breakdown Voltage
MRF581
(IC = 1.0 mAdc, IE = 0)
V(BR)CBO
36
30
—
Vdc
Emitter–Base Breakdown Voltage
MRF581
(IE = 0.1 mAdc, IC = 0)
MRF5812
V(BR)EBO
2.5
—
Vdc
Emitter Cutoff Current
MRF581
(VEB = 2.0 Vdc, VBE = 0)
IEBO
—
100
Adc
Collector Cutoff Current
MRF581
(VCB = 15 Vdc, IE = 0)
ICBO
—
100
Adc
Collector Cutoff Current
MRF5812
(VCB = 15 Vdc, VBE = 0, TC = 25°C)
ICBO
—
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
MRF581
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
50
—
200
—
DC Current Gain (1)
MRF5812
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
30
90
200
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
MRF581
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
1.4
2.0
pF
Collector–Base Capacitance
MRF5812
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
1.2
2.0
pF
Current–Gain Bandwidth Product
MRF581
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
fT
—
5.0
—
GHz
Current–Gain — Bandwidth Product
MRF5812
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
fT
—
5.5
—
GHz
FUNCTIONAL TESTS
Noise Figure (Minimum) (Figure 11)
MRF581
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
NFmin
—
2.0
3.0
dB
Noise Figure (Minimum) (Figure 11)
MRF5812
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
NFmin
—
2.0
—
dB
Noise Figure (50 Ohm Insertion)
MRF5812
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
NF50
—
2.5
3.0
dB
Power Gain at Optimum Noise Figure
MRF581
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
GNF
13
15.5
—
dB
Insertion Gain
MRF5812
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
|S21|2
13
15.5
—
dB
Maximum Unilateral Gain
(IC = 75 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
GUmax(2)
—
17
—
dB
Intermodulation Distortion (3)
(VCE = 10 V, IC = 75 mA, Vout = + 50 dBmV)
IMD(d3)
—
–65
—
dB
NOTE:
1. 300
s pulse on Tektronix 576 or equivalent.
2. GUmax =
3. 2 Tones, f1 = 497 MHz, f2 = 503 MHz, 3rd Order Single Tone reference.
|S21|2
(1
– |S11|2)(1 – |S22|2)
相關(guān)PDF資料
PDF描述
MRF5812 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MRF586 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-205AD
MRF586 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
MRF586 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
MRF587 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF581_08 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF5811LT1 制造商:Motorola Inc 功能描述:UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SOT-143
MRF5812 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MRF5812G 制造商:Microsemi Corporation 功能描述:MRF5812G - Bulk 制造商:Microsemi Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
MRF5812GR1 功能描述:TRANS NPN 15V 200MA 8-SOIC RoHS:是 類別:分離式半導體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*