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參數(shù)資料
| 型號： | MRF587 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 244A-01, 4 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 198K |
| 代理商： | MRF587 |
MRF587
The RF Line
NPN Silicon
High-Frequency Transistor
. . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband
amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
Low Noise Figure —
NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA
High Power Gain —
GU(max) = 16.5 dB (Typ) @ f = 500 MHz
Ion Implanted
All Gold Metal System
High fT — 5.5 GHz
Low Intermodulation Distortion:
TB3 = –70 dB
DIN = 125 dB
V
Nichrome Emitter Ballast Resistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
17
Vdc
Collector–Base Voltage
VCBO
34
Vdc
Emitter–Base Voltage
VEBO
2.5
Vdc
Collector Current — Continuous
IC
200
mAdc
Total Device Dissipation @ TC = 50°C
Derate above TC = 50°C
PD
5.0
33
Watts
mW/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Junction Temperature
TJ
200
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
17
—
Vdc
Collector–Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
V(BR)CBO
34
—
Vdc
Emitter–Base Breakdown Voltage
(IC = 0, IE = 0.1 mAdc)
V(BR)EBO
2.5
—
Vdc
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
—
50
Adc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
50
—
200
—
NOTE:
(continued)
1. 300
s pulse on Tektronix 576 or equivalent.
MRF587
NF = 3.0 dB @ 0.5 GHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 244A–01, STYLE 1
Order this document
by MRF587/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF5943C | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39 |
| MRF5943R2G | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF5943R1 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF5943R2 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MRF5943G | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5943 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF5943C | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF5943R1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF5943R2 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SO |
| MRF5P20180 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
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