參數(shù)資料
型號(hào)： MRF581
廠商： MOTOROLA INC
元件分類： 小信號(hào)晶體管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁數(shù)： 1/10頁
文件大小： 160K
代理商： MRF581
1
MRF581 MRF5812R1, R2
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
High-Frequency Transistors
Designed for high current low power amplifiers up to 1.0 GHz.
Low Noise (2.0 dB @ 500 MHz)
Low Intermodulation Distortion
High Gain
State–of–the–Art Technology
Fine Line Geometry
Arsenic Emitters
Gold Top Metallization
Nichrome Thin–Film Ballasting Resistors
Excellent Dynamic Range
Fully Characterized
High Current–Gain Bandwidth Product
MRF5812 available in tape and reel packaging by adding suffix:
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
MAXIMUM RATINGS
Rating
Symbol
MRF581
MRF5812
Unit
Collector–Emitter Voltage
VCEO
18
15
Vdc
Collector–Base Voltage
VCBO
36
30
Vdc
Emitter–Base Voltage
VEBO
2.5
Vdc
Collector Current — Continuous
IC
200
mAdc
Thermal Resistance
θJC (1)
MRF581
R
θJC
40
°C/W
Thermal Resistance
θJC (1)
MRF5812
R
θJC
45
°C/W
Total Device Dissipation @ TC = 75°C (1)
Derate above TC = 75°C
MRF581
PD
1.88
25
Watts
mW/
°C
Total Device Dissipation @ TC = 75°C (1)
Derate above TC = 75°C
MRF5812
PD
1.67
22.2
Watts
mW/
°C
Storage Junction Temperature Range
Tstg
– 55 to +150
°C
Maximum Junction Temperature
TJmax
150
°C
DEVICE MARKING
MRF5812 = 5812
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MRF581/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF581
MRF5812R1, R2
IC = 200 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
NPN SILICON
CASE 317–01, STYLE 2
MRF581
CASE 751–06, STYLE 1
SORF (SO–8)
MRF5812
Motorola, Inc. 1998
REV 9
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF581_08 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF5811LT1 制造商:Motorola Inc 功能描述:UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SOT-143
MRF5812 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MRF5812G 制造商:Microsemi Corporation 功能描述:MRF5812G - Bulk 制造商:Microsemi Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
MRF5812GR1 功能描述:TRANS NPN 15V 200MA 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
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