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參數(shù)資料
| 型號(hào)： | MRF5812R2 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 160K |
| 代理商： | MRF5812R2 |
MRF581 MRF5812R1, R2
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
MRF581
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
18
15
—
Vdc
Collector–Emitter Breakdown Voltage
MRF5812
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
15
—
Vdc
Collector–Emitter Breakdown Voltage
MRF5812
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
30
—
Vdc
Collector–Base Breakdown Voltage
MRF581
(IC = 1.0 mAdc, IE = 0)
V(BR)CBO
36
30
—
Vdc
Emitter–Base Breakdown Voltage
MRF581
(IE = 0.1 mAdc, IC = 0)
MRF5812
V(BR)EBO
2.5
—
Vdc
Emitter Cutoff Current
MRF581
(VEB = 2.0 Vdc, VBE = 0)
IEBO
—
100
Adc
Collector Cutoff Current
MRF581
(VCB = 15 Vdc, IE = 0)
ICBO
—
100
Adc
Collector Cutoff Current
MRF5812
(VCB = 15 Vdc, VBE = 0, TC = 25°C)
ICBO
—
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
MRF581
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
50
—
200
—
DC Current Gain (1)
MRF5812
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
30
90
200
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
MRF581
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
1.4
2.0
pF
Collector–Base Capacitance
MRF5812
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
1.2
2.0
pF
Current–Gain Bandwidth Product
MRF581
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
fT
—
5.0
—
GHz
Current–Gain — Bandwidth Product
MRF5812
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
fT
—
5.5
—
GHz
FUNCTIONAL TESTS
Noise Figure (Minimum) (Figure 11)
MRF581
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
NFmin
—
2.0
3.0
dB
Noise Figure (Minimum) (Figure 11)
MRF5812
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
NFmin
—
2.0
—
dB
Noise Figure (50 Ohm Insertion)
MRF5812
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
NF50
—
2.5
3.0
dB
Power Gain at Optimum Noise Figure
MRF581
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
GNF
13
15.5
—
dB
Insertion Gain
MRF5812
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
|S21|2
13
15.5
—
dB
Maximum Unilateral Gain
(IC = 75 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
GUmax(2)
—
17
—
dB
Intermodulation Distortion (3)
(VCE = 10 V, IC = 75 mA, Vout = + 50 dBmV)
IMD(d3)
—
–65
—
dB
NOTE:
1. 300
s pulse on Tektronix 576 or equivalent.
2. GUmax =
3. 2 Tones, f1 = 497 MHz, f2 = 503 MHz, 3rd Order Single Tone reference.
|S21|2
(1
– |S11|2)(1 – |S22|2)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF581A | 功能描述:射頻雙極小信號(hào)晶體管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MRF581AG | 功能描述:TRANS RF NPN 5GHZ 15V MACR0 X RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類(lèi)型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類(lèi)型:表面貼裝 封裝/外殼:4-SMD，扁平引線(xiàn) 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱(chēng):BFP 740FESD E6327DKR |
| MRF581AGT | 制造商:Microsemi Corporation 功能描述:MRF581AGT - Bulk |
| MRF581G | 功能描述:TRANS NPN 18V 200MA MACRO X RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類(lèi)型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類(lèi)型:表面貼裝 封裝/外殼:4-SMD，扁平引線(xiàn) 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱(chēng):BFP 740FESD E6327DKR |
| MRF581GT | 制造商:Microsemi Corporation 功能描述:MRF581GT - Bulk |
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