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參數(shù)資料
| 型號： | MRF326 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | BROADBAND RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 107K |
| 代理商： | MRF326 |
1
MRF326
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed primarily for wideband large–signal output amplifier stages in the
100 to 500 MHz frequency range.
Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 40 Watts
Minimum Gain = 9.0 dB
Built–In Matching Network for Broadband Operation
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
33
Vdc
Collector–Base Voltage
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
Collector Current
— Peak
4.5
6.0
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
PD
110
0.63
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.6
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 40 mAdc, IB = 0)
V(BR)CEO
33
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 40 mAdc, VBE = 0)
V(BR)CES
60
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 4.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 40 mAdc, IE = 0)
V(BR)CBO
60
—
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
—
4.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
20
50
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
45
60
pF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
Order this document
by MRF326/D
SEMICONDUCTOR TECHNICAL DATA
40 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
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| MRF327 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 33V 9A 4PIN CASE 316-01 - Bulk 制造商:M/A-COM TECHNOLOGY SOLUTIONS 功能描述:TRANS RF NPN 33V 9A 316-01 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF329 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF331 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF Line |
| MRF338 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF340 | 制造商:Motorola Inc 功能描述: |
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