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參數(shù)資料
| 型號： | MRF329 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | BROADBAND RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 107K |
| 代理商： | MRF329 |
1
MRF329
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed primarily for wideband large–signal output and driver amplifier
stages in the 100 to 500 MHz frequency range.
Specified 28 Volt, 400 MHz Characteristics —
Output Power = 100 Watts
Minimum Gain = 7.0 dB
Efficiency = 50% (Min)
Built–In Matching Network for Broadband Operation Using Double Match
Technique
100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
Gold Metallization System for High Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
30
Vdc
Collector–Base Voltage
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
Collector Current
— Peak
9.0
12
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
PD
270
1.54
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R
θ
JC
0.65
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 8.0 mAdc, IC = 0)
V(BR)CEO
30
—
—
Vdc
V(BR)CES
60
—
—
Vdc
V(BR)EBO
4.0
—
—
Vdc
NOTES:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
(continued)
Order this document
by MRF329/D
SEMICONDUCTOR TECHNICAL DATA
100 W, 100 to 500 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 333–04, STYLE 1
REV 6
相關PDF資料 |
PDF描述 |
|---|---|
| MRF338 | BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF5007R1 | Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Metal; Series:SM3102; No. of Contacts:19; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight |
| MRF8372R1 | RF LOW POWER TRANSISTOR NPN SILICON |
| MRF8372R2 | Half pitch, Ribbon cable IDC connection; HRS No: 572-0628-1 00; No. of Positions: 100; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.27; Terminal Pitch (mm): 2.54; Termination Style: IDC; Current Rating(Amps)(Max.): 0.5; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -55 to 85; General Description: Housing; Cable connector with lock |
| MRF8372 | RF LOW POWER TRANSISTOR NPN SILICON |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF331 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF Line |
| MRF338 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF340 | 制造商:Motorola Inc 功能描述: |
| MRF340_07 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF342 | 制造商:ASI 制造商全稱:ASI 功能描述:SILICON POWER NPN TRANSISTOR |
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