- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379326 > MRF8372R1 (MOTOROLA INC) RF LOW POWER TRANSISTOR NPN SILICON PDF資料下載
參數(shù)資料
| 型號： | MRF8372R1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | RF LOW POWER TRANSISTOR NPN SILICON |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 101K |
| 代理商： | MRF8372R1 |
1
MRF8372R1, R2
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed primarily for wideband large signal predriver stages in 800 MHz
and UHF frequency ranges.
Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 750 mW
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)
State–of–the–Art Technology
Fine Line Geometry
Gold Top Metal and Wires
Silicon Nitride Passivated
Ion Implanted Arsenic Emitters
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order MRF8372 in tape and reel packaging by adding suffix:
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
16
Vdc
Collector–Base Voltage
36
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
200
mAdc
Total Device Dissipation @ TC = 75
°
C (1)
Derate above 75
°
C
1.67
22.2
Watts
mW/
°
C
Storage Temperature Range
TJ, Tstg
TJmax
–55 to +150
°
C
°
C
Maximum Junction Temperature
150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
Thermal Resistance, Junction to Case
R
θ
JC
45
DEVICE MARKING
MRF8372 = 8372
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MRF8372/D
SEMICONDUCTOR TECHNICAL DATA
750 mW, 870 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 751–05, STYLE 1
SORF (SO–8)
(Replaces MRF837/D)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF8372R2 | Half pitch, Ribbon cable IDC connection; HRS No: 572-0628-1 00; No. of Positions: 100; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.27; Terminal Pitch (mm): 2.54; Termination Style: IDC; Current Rating(Amps)(Max.): 0.5; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -55 to 85; General Description: Housing; Cable connector with lock |
| MRF8372 | RF LOW POWER TRANSISTOR NPN SILICON |
| MRF848 | RF POWER TRANSISTOR |
| MRF894 | CAP 680PF 250VAC B X1Y2 RAD |
| MRF9745T1 | HIGH FREQUENCY POWER TRANSISTOR LDMOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8372R2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| MRF837G | 制造商:Microsemi Corporation 功能描述:MRF837G - Bulk |
| MRF837GT | 制造商:Microsemi Corporation 功能描述:MRF837GT - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF837T | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF838A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。