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MRF5007 MRF5007R1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF MOSFET Line
N–Channel Enhancement–Mode
The MRF5007 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 Volt portable FM equipment.
Guaranteed Performance at 512 MHz, 7.5 Volts
Output Power = 7.0 Watts
Power Gain = 10 dB Min
Efficiency = 50% Min
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
All Gold Metal for Ultra Reliability
Capable of Handling 20:1 VSWR, @ 10 Vdc, 512 MHz, 2.0 dB Overdrive
True Surface Mount Package
Available in Tape and Reel by Adding R1 Suffix to Part Number.
R1 Suffix = 500 Units per 16 mm, 7 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
ID
PD
25
Vdc
Drain–Gate Voltage (RGS = 1.0 Meg Ohm)
Gate–Source Voltage
25
Vdc
±
20
Vdc
Drain Current — Continuous
4.5
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
25
0.14
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
3.8
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF5007/D
SEMICONDUCTOR TECHNICAL DATA
7.0 W, 7.5 Vdc
512 MHz
N–CHANNEL
BROADBAND
RF POWER FET
CASE 430B–02, Style 1
REV 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF8372R1 | RF LOW POWER TRANSISTOR NPN SILICON |
| MRF8372R2 | Half pitch, Ribbon cable IDC connection; HRS No: 572-0628-1 00; No. of Positions: 100; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.27; Terminal Pitch (mm): 2.54; Termination Style: IDC; Current Rating(Amps)(Max.): 0.5; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -55 to 85; General Description: Housing; Cable connector with lock |
| MRF8372 | RF LOW POWER TRANSISTOR NPN SILICON |
| MRF848 | RF POWER TRANSISTOR |
| MRF894 | CAP 680PF 250VAC B X1Y2 RAD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF501 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| MRF5015 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-CHANNEL BROADBAND RF POWER FET |
| MRF502 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| MRF5035 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-CHANNEL BROADBAND RF POWER FET |
| MRF517 | 制造商:Microsemi Corporation 功能描述:MRF517 - Bulk 制造商:Motorola 功能描述:517 SEMI 制造商:Microsemi Corporation 功能描述:TRANS BIPO NPN TO-39 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, TO-39 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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