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參數(shù)資料
| 型號： | MRF5007R1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Metal; Series:SM3102; No. of Contacts:19; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 430B-02, 3 PIN |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 161K |
| 代理商： | MRF5007R1 |
MRF5007 MRF5007R1
8
MOTOROLA RF DEVICE DATA
MOUNTING
The specified maximum thermal resistance of 7.0
°
C/W as-
sumes a majority of the 0.137
″
x 0.185
″
source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. In the test fixture shown in Figure 1, the
device is clamped directly to a copper pedestal. As with all
RF power devices, the goal of the thermal design should be
to minimize the temperature at the back side of the package.
It is recomended that this temperature not exceed 100
°
C for
any operating condition. Contact customer service for addi-
tional information on thermal considerations for mounting.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for the MRF5007. For exam-
ples see Motorola Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.” Both
small–signal S–parameters and large–signal impedances
are provided. While the S–parameters will not produce an
exact design solution for high power operation, they do yield
a good first approximation. This is an additional advantage of
RF power MOSFETs.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of the
MRF5007 yields a device capable of self oscillation. Stability
may be achieved by techniques such as drain loading, input
shunt resistive loading, or output to input feedback. The RF
test fixture implements a parallel resistor and capacitor in se-
ries with the gate and has a load line selected for a higher
efficiency, lower gain, and more stable operating region.
Two port stability analysis with the MRF5007 S–parame-
ters provides a useful tool for selection of loading or feed-
back circuitry to assure stable operation. See Motorola
Application Note AN215A, “RF Small–Signal Design Using
Two–Port Parameters,” for a discussion of two port network
theory and stability.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF501 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| MRF5015 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-CHANNEL BROADBAND RF POWER FET |
| MRF502 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| MRF5035 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-CHANNEL BROADBAND RF POWER FET |
| MRF517 | 制造商:Microsemi Corporation 功能描述:MRF517 - Bulk 制造商:Motorola 功能描述:517 SEMI 制造商:Microsemi Corporation 功能描述:TRANS BIPO NPN TO-39 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, TO-39 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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