- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96050 > MRF21010R1 (FREESCALE SEMICONDUCTOR INC) S BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF21010R1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-360, CASE 360B-05, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 396K |
| 代理商： | MRF21010R1 |
5
MRF21010R1 MRF21010LSR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 4. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
Figure 5. W–CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
Figure 6. Intermodulation Distortion versus
Output Power
VDD, DRAIN VOLTAGE (VOLTS)
12
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
22
2000
-45
-25
13
2140
-55
32
10
1
-60
2280
15
0
40
10
5
15
20
-35
Figure 9. Intermodulation and Gain versus Supply
Voltage
Pout, OUTPUT POWER (WATTS) PEP
13.5
14.5
0.1
13.0
12.0
14.0
IMD
VDD = 28 Vdc, Pout = 10 W (PEP), IDQ = 100 mA
Two Tone Measurement, 100 kHz Tone Spacing
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
G
ps
,POWER
GAIN
(dB)
10
100
VDD = 28 Vdc, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
-50
-40
150 mA
130 mA
100 mA
80 mA
-30
VDD = 28 Vdc, f = 2140 MHz
Two Tone Measurement,
100 kHz Tone Spacing
100 mA
150 mA
130 mA
80 mA
26
28
30
14
-42
-38
-34
-30
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
2080
2110
2200
2170
25
30
35
-40
-35
-30
-25
-20
-15
-10
-5
0
IMD
IRL
IRL,
INPUT
RETURN
LOSS
(dB)
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
Gps
η
Gps
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
3
Pout, OUTPUT POWER (WATTS Avg.) W-CDMA
30
20
1
2
3.5
25
5
10
-60
-20
-40
η
VDD = 28 Vdc, IDQ = 130 mA, f = 2140 MHz
Channel Spacing 5 MHz, BW 4.096 MHz
(15 Channels)
2.5
0.5
1.5
-50
Gps
ACPR
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dB)
15
-30
-10
0.1
Pout, OUTPUT POWER (WATTS) PEP
100
-45
-25
-55
10
1
-60
-35
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
-50
-40
-30
VDD = 28 Vdc, IDQ = 100 mA, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
3rd Order
7th Order
5th Order
0.1
-65
-70
-20
1
12.5
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
G
ps
,POWER
GAIN
(dB)
-40
-36
-32
Pout = 10 W (PEP), IDQ = 100 mA, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF21010R1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21010SR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21010S | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21030R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21060SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21030D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
| MRF21030LR3 | 功能描述:射頻MOSFET電源晶體管 30W 2.2GHZ LDMOS NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF21030LR5 | 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21030LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21030R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。