參數(shù)資料
型號(hào): MRF21010R1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-360, CASE 360B-05, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 396K
代理商: MRF21010R1
MRF21010R1 MRF21010LSR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 A)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
10
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 50 A)
VGS(th)
2.5
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
VGS(Q)
2.5
4
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 0.5 A)
VDS(on)
0.4
0.5
Vdc
Forward Transconductance
(VDS = 10 V, ID = 1 A)
gfs
0.95
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
1
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two–Tone Common Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Gps
12
13.5
dB
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
η
31
35
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
IMD
–35
–30
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
IRL
–12
–10
dB
Output Power, 1 dB Compression Point, CW
(VDD = 28 Vdc, IDQ = 100 mA, f = 2170 MHz)
P1dB
11
W
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA,
f = 2170 MHz)
Gps
12
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA,
f = 2170 MHz)
η
42
%
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA,
f = 2170 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
Ψ
No Degradation In Output Power
Before and After Test
相關(guān)PDF資料
PDF描述
MRF21010R1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21010SR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21010S S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21030R3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21060SR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
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