參數(shù)資料
型號: MRF1090MA
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CASE 332-04, 4 PIN
文件頁數(shù): 2/4頁
文件大小: 127K
代理商: MRF1090MA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
Cob
12
16
pF
FUNCTIONAL TESTS (Pulse Width = 10
s, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz)
GPB
8.4
10.8
dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz)
η
35
40
%
Load Mismatch
(VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1, C2 — 220 pF Chip Capacitor, 100–mil ATC
C3 — 0.1
F
C4 — 47
F/75 V
L1, L2 — 3 Turns #18 AWG, 1/8
″ ID
Z1–Z9 — Distributed Microstrip Elements,
See Photomaster
Board Material — 0.031
″ Thick Glass Teflon, εr = 2.5
RF
OUTPUT
DUT
RF
INPUT
50 Vdc
C2
C3
C4
L1L2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C1
-
+
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
120
100
80
60
40
20
36
9
12
15
0
Pin, INPUT POWER (WATTS pk)
P
,OUTPUT
POWER
(W
ATTS
pk)
out
120
100
80
60
40
20
f, FREQUENCY (MHz)
P
,OUTPUT
POWER
(W
ATTS
pk)
out
VCC = 50 V
tp = 10 s
D = 1%
7.5 W pk
4.5 W pk
9 W pk
6 W pk
Pin = 10.5 W pk
f = 960 MHz
1090 MHz
1215 MHz
VCC = 50 V
tp = 10 s
D = 1%
960
1090
1215
2
REV 9
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