參數(shù)資料
型號(hào)： MRF1090MA
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CASE 332-04, 4 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 127K
代理商： MRF1090MA
The RF Line
Microwave Pulse
Power Transistor
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 90 Watts Peak
Minimum Gain = 8.4 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized for Long Life and Resistance to Metal Migration
Internal Input Matching for Broadband Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Base Voltage
VCBO
70
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector–Current — Peak (1)
IC
6.0
Adc
Total Device Dissipation @ TC = 25°C (1) (2)
Derate above 25
°C
PD
290
1.66
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
RθJC
0.6
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
70
—
Vdc
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
V(BR)CBO
70
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(IC = 2.5 Adc, VCE = 5.0 Vdc)
hFE
10
30
—
NOTES:
(continued)
1. Pulse Width = 10
s, Duty Cycle = 1%.
2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80
s Pulse on Tektronix 576 or equivalent.
MRF1090MA
90 W PEAK, 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 332–04, STYLE 1
Order this document
by MRF1090MA/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 9
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