- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96049 > MRF1150MB L BAND, Si, NPN, RF POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF1150MB |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 332A-03, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 146K |
| 代理商： | MRF1150MB |
The RF Line
Microwave Pulse
Power Transistor
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 150 Watts Peak
Minimum Gain = 7.8 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Base Voltage
VCBO
70
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Peak (1)
IC
12
Adc
Total Device Dissipation @ TC = 25°C (1) (2)
Derate above 25
°C
PD
583
3.33
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
RθJC
0.3
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
70
—
Vdc
Collector–Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
70
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
—
10
mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
10
30
—
NOTES:
(continued)
1. Pulse Width = 10
s, Duty Cycle = 1%.
2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80
s Pulse on Tektronix 576 or equivalent.
MRF1150MB
150 W PEAK, 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 332A–03, STYLE 1
1
REV 0
Order this document
by MRF1150MB/D
SEMICONDUCTOR TECHNICAL DATA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF1150MB | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF1325M | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF134-39 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-39 |
| MRF134 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF141G | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF12 | 功能描述:標(biāo)準(zhǔn)環(huán)形連接器 RECEPT SET MINICON FML W/ MBS CONTACTS RoHS:否 制造商:Hirose Connector 系列:EM-W 產(chǎn)品類型:Accessories 位置/觸點(diǎn)數(shù)量:1 觸點(diǎn)類型: 觸點(diǎn)電鍍: 安裝風(fēng)格:Cable 外殼材質(zhì): 端接類型:Clamp 電壓額定值: |
| MRF125 | 制造商:Ferraz Shawmut 功能描述: |
| MRF134 | 功能描述:射頻MOSFET電源晶體管 5-400MHz 5 Watts 28Volt Gain 11dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF134-39 | 制造商:ASI 制造商全稱:ASI 功能描述:VHF POWER MOSFET |
| MRF136 | 功能描述:射頻MOSFET電源晶體管 5-400MHz 15Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。