參數(shù)資料
型號(hào)： MRF1150MB
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CASE 332A-03, 4 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 146K
代理商： MRF1150MB
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
25
32
pF
FUNCTIONAL TESTS (Pulse Width = 10
s, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz)
GPB
7.8
9.8
—
dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz)
η
35
40
—
%
Load Mismatch
(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1, C2 — 220 pF Chip Capacitor, 100–mil ATC
C3 — 0.1
F/100 V
C4 — 47
F/75 V Electrolytic
L1, L2 — 3 Turns #18 AWG, 1/8
″ ID
Z1–Z10 — Distributed Microstrip Elements — See Photomaster
Board Material — 0.031
″ Thick Teflon–Fiberglass, εr = 2.5
RF
OUTPUT
DUT
RF
INPUT
VCC = 50 Vdc
C2
C3
C4
L1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C2
-
+
Z10
L2
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
200
150
100
50
0
510
15
20
25
0
Pin, INPUT POWER (WATTS pk)
P
,OUTPUT
POWER
(W
ATTS
pk)
out
f, FREQUENCY (MHz)
P
,OUTPUT
POWER
(W
ATTS
pk)
out
VCC = 50 V
tp = 10 s
D = 1%
Pin = 20 W pk
VCC = 50 V
tp = 10 s
D = 1%
f = 960 MHz
1090 MHz
1215 MHz
200
150
100
50
0
960
1090
1215
17.5 W pk
12.5 W pk
10 W pk
15 W pk
2
REV 0
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