參數(shù)資料
型號： MP6404
廠商： Toshiba Corporation
英文描述： TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
中文描述： 東芝功率場效應晶體管模塊硅?
文件頁數(shù)： 9/11頁
文件大?。?/td> 276K
代理商： MP6404
MP6404
2004-07-01
9
Ambient temperature Ta (°C)
P
DT
– Ta
T
D
Total power dissipation P
DT
(W)
T
ch
– P
DT
C
T
c
(1)
(2)
(3) (4)
2
4
6
8
0
160
40
80
120
10
0
Attached on a circuit board
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 6-device operation
Circuit board
(4)
(3)
(2)
(1)
0
8
40
2
4
6
80
120
160
200
0
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 6-device operation
Attached on a circuit board
Circuit board
0.001
0.01
0.1
1
10
100
1000
0.1
Curves should be applied in thermal
limited area. (Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
-No heat sink/Attached on a circuit board-
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 6-device operation
Circuit board
(1)
(2)
(3)
(4)
Nch MOS FET
Pch MOS FET
0.3
1
3
10
30
100
300
r
th
– t
w
Pulse width t
w
(s)
T
t
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