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參數(shù)資料
| 型號： | MP6404 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type |
| 中文描述： | 東芝功率場效應(yīng)晶體管模塊硅? |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 276K |
| 代理商： | MP6404 |
MP6404
2004-07-01
3
Electrical Characteristics
(Ta = 25°C) (Nch MOS FET)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±16 V, V
DS
= 0 V
―
―
±10
μA
Drain cut-off current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
―
―
100
μA
Drain source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
60
―
―
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
0.8
―
2.0
V
V
GS
= 4 V, I
D
= 2.5 A
―
0.21
0.32
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 2.5 A
―
0.12
0.16
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V, I
D
= 2.5 A
3.0
5.0
―
S
Input capacitance
C
iss
―
370
―
pF
Reverse transfer capacitance
C
rss
―
60
―
pF
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
―
180
―
pF
Rise time
t
r
―
18
―
Turn-on time
t
on
―
25
―
Fall time
t
f
―
55
―
Switching time
Turn-off time
t
off
V
IN
: t
r
, t
f
< 5 ns, duty
≤
1%, t
w
= 10 μs
―
170
―
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
―
12
―
nC
Gate-source charge
Q
gs
―
8
―
nC
Gate-drain (“miller”) charge
Q
gd
V
DD
≈
48 V, V
GS
= 10 V, I
D
= 5 A
―
4
―
nC
Source-Drain Diode Ratings and Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
I
DR
―
―
―
5
A
Pulse drain reverse current
I
DRP
―
―
―
20
A
Diode forward voltage
V
DSF
I
DR
= 5 A, V
GS
= 0 V
―
―
1.7
V
Reverse recovery time
t
rr
―
70
―
ns
Reverse recovery charge
Q
rr
I
DR
= 5 A, V
GS
= 0 V
dI
DR
/dt = 50 A/μs
―
0.1
―
μC
10
V
V
GS
R
L
V
DD
≈
30 V
I
D
= 2.5
A
V
OUT
5
0 V
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