- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369923 > MP6404 (Toshiba Corporation) TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type PDF資料下載
參數(shù)資料
| 型號： | MP6404 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type |
| 中文描述： | 東芝功率場效應(yīng)晶體管模塊硅? |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 276K |
| 代理商： | MP6404 |
MP6404
2004-07-01
1
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Six L
2
-
π
-MOSV inOne)
MP6404
High Power High Speed Switching Applications
3-Phase Motor Drive and Stepping Motor Drive
Applications
4-V gate drivability
Small package by full molding (SIP 12 pins)
High drain power dissipation (6-device operation)
: P
T
= 36 W (Tc = 25°C)
Low drain-source ON resistance: R
DS (ON)
= 120 m
(typ.) (Nch)
High forward transfer admittance: |Y
fs
| = 5.0 S (typ.) (Nch)
Low leakage current: I
GSS
= ±10 μA (max) (V
GS
= ±16 V)
I
DSS
= 100 μA (max) (V
DS
= 60 V)
Enhancement-mode: V
th
= 0.8 V to 2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25°C)
160 m
(typ.) (Pch)
4.0 S (typ.) (Pch)
Rating
Characteristics
Symbol
Nch
Pch
Unit
Drain-source voltage
V
DSS
V
DGR
V
GSS
I
D
I
DP
60
60
V
Drain-gate voltage (R
GS
= 20 k
)
60
60
V
Gate-source voltage
±20
±20
V
DC
5
5
Drain current
Pulse
20
20
A
Drain power dissipation
(1-device operation, Ta = 25°C)
P
D
2.2
W
Ta = 25°C
4.4
Drain power dissipation
(6-device operation)
Tc = 25°C
P
DT
36
W
Single pulse avalanche energy
(Note 1)
E
AS
129
273
mJ
Avalanche current
I
AR
5
5
A
1 device
operation
E
AR
0.22
Repetitive avalanche
energy
(Note 2) 6 device
operation
E
ART
0.44
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note 1: Condition for avalanche energy (single pulse)
Nch: V
DD
= 25 V, starting T
ch
= 25°C, L = 7 mH, R
G
= 25
, I
AR
= 5 A
Pch: V
DD
=
25 V, starting T
ch
= 25°C, L = 14.84 mH, R
G
= 25
, I
AR
=
5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-32C1K
Weight: 3.9 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MP6750 | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MP6752 | HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
| MP6754DS | Silicon N channel IGBT(N溝道絕緣柵雙極型晶體管) |
| MP6754 | Silicon N Channel IGBT(High Power Switching Applications Motor Control Applications) |
| MP6757 | GTR MODULE SILICON N CHANNEL LGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MP6404(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N/P-CH 60V 5A 12-Pin SIP Cut Tape 制造商:Toshiba America Electronic Components 功能描述:MOSFET MOD N/P-CH 60V 5A 12-SIP |
| MP6404_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications |
| MP640B | 功能描述:晶體 64MHz 18pF 30ppm -20/70 RoHS:否 制造商:AVX 頻率:26 MHz 容差: 頻率穩(wěn)定性:50 PPM 負(fù)載電容:8 pF 端接類型:SMD/SMT 封裝 / 箱體:1210 (3225 metric) 工作溫度范圍:- 40 C to + 150 C 尺寸:2.5 mm W x 3.2 mm L x 0.85 mm H 封裝:Reel |
| MP640B-E | 功能描述:晶體 64MHz 18pF 30ppm -40/85 RoHS:否 制造商:AVX 頻率:26 MHz 容差: 頻率穩(wěn)定性:50 PPM 負(fù)載電容:8 pF 端接類型:SMD/SMT 封裝 / 箱體:1210 (3225 metric) 工作溫度范圍:- 40 C to + 150 C 尺寸:2.5 mm W x 3.2 mm L x 0.85 mm H 封裝:Reel |
| MP640-M06-F16-M3.0 | 制造商:UNICORP 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。