參數(shù)資料
型號(hào)： MP4104
元件分類： 功率晶體管
英文描述： 4 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
封裝： LEAD FREE, 2-25A1A, SIP-10
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 0K
代理商： MP4104
MP4104
2006-10-27
2
Marking
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance from junction to
ambient
(4-device operation, Ta = 25°C)
ΣRth (j-a)
31.3
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL
260
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0 A
―
10
μA
Collector cut-off current
ICEO
VCE = 100 V, IB = 0 A
―
10
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0 A
0.5
―
2.5
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0 A
120
―
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0 A
100
―
V
hFE (1)
VCE = 2 V, IC = 1.5 A
2000
―
15000
DC current gain
hFE (2)
VCE = 2 V, IC = 3.0 A
1000
―
Collector-emitter
VCE (sat)
IC = 1.5 A, IB = 3 mA
―
1.5
Saturation voltage
Base-emitter
VBE (sat)
IC = 1.5 A, IB = 3 mA
―
2.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
―
60
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
―
30
―
pF
Turn-on time
ton
―
0.3
―
Storage time
tstg
―
2.0
―
Switching time
Fall time
tf
IB1 = IB2 = 3 mA
―
0.4
―
μs
I B1
20 μs
VCC = 30 V
Output
20
IB2
IB1
Input
I B2
MP4104
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相關(guān)PDF資料
PDF描述
MP4208 5 A, 60 V, 0.5 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
MP4209 3 A, 100 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
MP4211 5 A, 60 V, 0.28 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
MP4303 2 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
MP4403 5 A, 120 V, 0.44 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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