參數資料
型號: MP4101
元件分類: 功率晶體管
英文描述: 4 A, 60 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
封裝: SIP-10
文件頁數: 4/5頁
文件大小: 148K
代理商: MP4101
MP4101
2006-10-27
4
Ambient temperature Ta (°C)
PT – Ta
To
ta
lpo
wer
di
ssip
ation
P
T
(W)
rth – tw
Pulse width tw (s)
T
ransie
nt
th
ermal
r
esi
st
an
ce
r th
C/W)
Total power dissipation PT (W)
ΔTj – PT
Ju
nc
tion
te
m
pe
rat
ur
e
in
cr
ea
se
Δ
T
j
C
)
Collector-emitter voltage VCE (V)
Safe Operating Area
Colle
ct
or
curr
ent
I C
(A
)
1
2
3
4
0
160
40
80
120
5
0
Attached on a circuit board
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Circuit board
(1)
(2)
(3)
(4)
(3)
0
8
40
2
4
6
80
120
160
200
0
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Attached on a circuit board
Circuit board
(4)
(2)
(1)
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.03
0.5
0.05
0.1
0.3
0.5
1
3
5
10
1
3
5
10
30
50
100
IC max (pulsed)*
100 ms*
10 ms*
1 ms*
VCEO max
0.001
0.01
0.1
1
10
100
1000
0.3
-No heat sink/Attached on a circuit board-
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Circuit board
(4)
(3)
(2)
(1)
1
3
10
30
100
300
Curves should be applied in thermal
limited area.
(Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
相關PDF資料
PDF描述
MP4104 4 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
MP4208 5 A, 60 V, 0.5 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
MP4209 3 A, 100 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
MP4211 5 A, 60 V, 0.28 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
MP4303 2 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
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