參數(shù)資料
型號: MP4006
廠商: Toshiba Corporation
英文描述: Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
中文描述: 硅npn型
文件頁數(shù): 6/7頁
文件大?。?/td> 163K
代理商: MP4006
MP4006
2002-11-20
6
Collector-emitter voltage V
CE
(V)
Safe Operating Area (NPN Tr)
T
t
r
th
– t
w
Pulse width t
w
(s)
T
r
t
Ambient temperature Ta (°C)
P
T
– Ta
T
T
Total power dissipation P
T
(W)
T
j
– P
T
J
T
j
Collector-emitter voltage V
CE
(V)
Safe Operating Area (NPN Tr)
T
t
0
8
40
2
4
6
80
120
160
200
0
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Attached on a circuit board
Circuit board
(4)
(3)
(2)
(1)
1
2
3
4
0
160
40
80
120
5
0
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
(1)
(2)
(3)
(4)
0.03
1
3
5
10
30
50
100
300
0.05
0.1
0.3
0.5
1
3
5
*
: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (pulsed)
*
10 ms
*
1 ms
*
100 μs
*
VCEO max
0.03
1
3
5
10
30
50
100
300
0.05
0.1
0.3
0.5
1
3
5
*
: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (pulsed)
*
10 ms
*
1 ms
*
100 μs
*
VCEO max
0.001
0.01
0.1
1
10
100
0.5
1
3
10
30
100
Curves should be applied in thermal
limited area (single nonrepetitive pulse)
Below figure show thermal resistance per
1 unit versus pulse width.
-No heat sink and attached on a circuit board-
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
(3)
(2)
(1)
NPN
PNP
(4)
1000
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