參數資料
型號: MP4006
廠商: Toshiba Corporation
英文描述: Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
中文描述: 硅npn型
文件頁數: 1/7頁
文件大?。?/td> 163K
代理商: MP4006
MP4006
2002-11-20
1
TOSHIBA Power Transistor Module
Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
MP4006
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Small package by full molding (SIP 10 pin)
High collector power dissipation (4 devices operation)
: I
C (DC)
= ±2 A (max)
High DC current gain: h
FE
= 2000 (min) (V
CE
= ±2 V, I
C
= ±1 A)
Maximum Ratings
(Ta = 25°C)
Rating
Characteristics
Symbol
NPN
PNP
Unit
Collector-base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
80
80
V
Collector-emitter voltage
80
80
V
Emitter-base voltage
8
8
V
DC
2
2
Collector current
Pulse
3
3
A
Continuous base current
0.5
0.5
A
Collector power dissipation
(1 device operation)
P
C
2.0
W
Collector power dissipation
(4 devices operation)
P
T
4.0
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-25A1B
Weight: 2.1 g (typ.)
7
2
10
R1 R2
4
9
1
R1
4 k
R2
800
8
6
5
R1 R2
3
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