參數(shù)資料
型號(hào): MP4006
廠商: Toshiba Corporation
英文描述: Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
中文描述: 硅npn型
文件頁(yè)數(shù): 4/7頁(yè)
文件大小: 163K
代理商: MP4006
MP4006
2002-11-20
4
(NPN transistor)
V
CE
– I
B
Base-emitter voltage V
BE
(V)
Collector current I
C
(A)
V
CE (sat)
– I
C
C
V
C
Collector current I
C
(A)
V
BE (sat)
– I
C
B
V
B
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
C
C
I
C
– V
BE
C
C
Collector current I
C
(A)
h
FE
– I
C
D
F
Base current I
B
(mA)
C
C
)
Common emitter
Ta = 25°C
0
0.1
1
10
100
500
0.4
0.8
1.2
1.6
1.5
IC = 3 A
2.5
2.0
1
0.5
0.1
2.4
2.0
0
0
0.8
1.6
2.4
3.2
0.8
1.6
2.4
3.2
4.0
Common emitter
VCE = 2 V
25
55
Ta = 100°C
0.1
0.3
0.3
0.5
1
3
0.5
1
3
5
Common emitter
IC/IB = 500
25
100
Ta =
55°C
100
0.03
25
55
Ta = 100°C
0.1
0.3
1
3
10
300
500
1000
3000
5000
10000
Common emitter
VCE = 2 V
0.05
0.5
5
0.3
0.3
0.5
1
3
0.5
1
3
5
Common emitter
IC/IB = 500
25
100
Ta =
55°C
0.3
IB = 0.19 mA
0.21
0.23
0.5
2
0
0
Common emitter
Ta = 25°C
0.8
1.6
2.4
3.2
2
4
6
8
10
0.2
0
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