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參數(shù)資料
| 型號： | MMSF3350R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 233K |
| 代理商： | MMSF3350R2 |
MMSF3350
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
10
20
25
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
24
0
6
12
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
3
24
10
0
0.2
0.3
0
5
10
25
0.020
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
510
15
30
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 125°C
–55
°C
TJ = 25°C
VGS = 0 V
ID = 5.0 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
ID = 10 A
3
3.5
68
10 V
– 50
– 25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
20
25
100
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.25
0.5
1.25
1.0
1.5
2.0
5
15
2
10
14
0.002
0.004
0
0.5
0
0.1
15
25
°C
0.75
1.75
TJ = 25°C
4.5 V
6.0 V
10 V
2.5
4
8
25
°C
57
9
20
0.006
0.008
0.010
0.012
0.014
0.016
0.018
4.3 V
4.1 V
3.9 V
VGS = 3.7 V
3.5 V
3.3 V
3.1 V
2.9 V
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