參數(shù)資料
型號(hào)： MMSF3350R2
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： 13 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 233K
代理商： MMSF3350R2
MMSF3350
2
Motorola TMOS Power MOSFET Transistor Device Data
POWER RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp
≤ 10 ms)
Mounted on 1 inch square
FR–4 or G10 board
ID
IDM
13
9.2
50
Adc
Continuous Source Current (Diode Conduction)
VGS =10Vdc
IS
3.6
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
t
≤ 10 seconds
PD
2.7
22.2
Watts
mW/
°C
Thermal Resistance — Junction–to–Ambient
t
≤ 10 seconds
R
θJA
46
°C/W
Parameter
Symbol
Value
Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp
≤ 10 ms)
Mounted on 1 inch square
FR–4 or G10 board
ID
IDM
9.4
6.7
50
Adc
Continuous Source Current (Diode Conduction)
VGS =10Vdc
IS
2.0
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
Steady State
PD
1.5
11.8
Watts
mW/
°C
Thermal Resistance — Junction–to–Ambient
Steady State
R
θJA
85
°C/W
Parameter
Symbol
Value
Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp
≤ 10 ms)
Mounted on minimum recommended
FR–4 or G10 board
ID
IDM
10
7.4
50
Adc
Continuous Source Current (Diode Conduction)
VGS =10Vdc
IS
2.4
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
t
≤ 10 seconds
PD
1.8
14.3
Watts
mW/
°C
Thermal Resistance — Junction–to–Ambient
t
≤ 10 seconds
R
θJA
70
°C/W
Parameter
Symbol
Value
Unit
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp
≤ 10 ms)
Mounted on minimum recommended
FR–4 or G10 board
ID
IDM
7.4
5.2
50
Adc
Continuous Source Current (Diode Conduction)
VGS =10Vdc
IS
1.2
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
Steady State
PD
0.9
7.1
Watts
mW/
°C
Thermal Resistance — Junction–to–Ambient
Steady State
R
θJA
140
°C/W
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