- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98026 > MMSF3350R2 (MOTOROLA INC) 13 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MMSF3350R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 233K |
| 代理商： | MMSF3350R2 |
MMSF3350
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
33
23
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
0.003
0.4
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
—
2.0
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
2.0
4.6
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
—
9.4
14.4
11
17
m
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc)
gFS
12
17
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vdc V
0 Vdc
Ciss
—
1680
—
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
540
—
Transfer Capacitance
f = 1.0 MHz)
Crss
—
185
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
25 Vd
I
1 0 Ad
td(on)
—
21
40
ns
Rise Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS =4 5Vdc
tr
—
50
90
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 6.0 )
td(off)
—
42
80
Fall Time
G
)
tf
—
44
80
Turn–On Delay Time
(V
25 Vd
I
1 0 Ad
td(on)
—
12
20
ns
Rise Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS =10Vdc
tr
—
15
30
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 )
td(off)
—
60
100
Fall Time
G
)
tf
—
44
80
Gate Charge
(V
15 Vd
I
2 0 Ad
QT
—
46
60
nC
(VDS = 15 Vdc, ID = 2.0 Adc,
Q1
—
4.5
—
( DS
, D
,
VGS = 10 Vdc)
Q2
—
12.8
—
Q3
—
9.8
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.76
0.58
1.0
—
Vdc
Reverse Recovery Time
(I
3 5 Ad
V
0 Vd
trr
—
41
—
ns
(IS = 3.5 Adc, VGS = 0 Vdc,
ta
—
21
—
( S
,
GS
,
dIS/dt = 100 A/s)
tb
—
20
—
Reverse Recovery Stored Charge
QRR
—
0.049
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMSF3P03HDR2 | 4.6 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MMSF4205R2 | 8.8 A, 20 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MMSF4205R2 | 8.8 A, 20 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MMSF4N01HDR2 | 5800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMSF4P01HDR2 | 5.1 A, 12 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMSF3P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS |
| MMSF3P02HDR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF3P02HDR2G | 功能描述:MOSFET PFET SO8S 20V 5.6A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF3P02HDR2SG | 功能描述:MOSFET P-CH 20V 5.6A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMSF3P03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。