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參數(shù)資料
| 型號： | MMJT9435 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Bipolar Power Transistors PNP Silicon(PNP型雙極性功率晶體管) |
| 中文描述： | Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MMJT9435 |
MMJT9435
http://onsemi.com
5
Figure 9. CurrentGain Bandwidth Product
10
0.1
I
C
, COLLECTOR CURRENT (A)
1000
10
f
t
1.0
,
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
1.0
0.1
10
1.0
0.001
I
C
10
100
Figure 10. Active Region Safe Operating Area
0.01
0.1
,
V
CE
= 10 V
f
test
= 1.0 MHz
T
A
= 25
°
C
BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT
0.5 ms
100 ms
5.0 ms
100
Figure 11. Power Derating
150
25
T, TEMPERATURE (
°
C)
4.0
3.0
2.0
1.0
0
P
D
50
,
75
100
125
T
A
T
C
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on T
J(pk)
= 150
°
C; T
C
is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
150
°
C. T
J(pk)
may be calculated from the data in
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.02
0.01
Figure 12. Thermal Response
0.01
0.1
0.0001
t, TIME (seconds)
1.0
0.1
0.01
r
0.0001
0.001
0.001
10
100
1.0
R
1000
R
JA
(t) = r(t)
JA
JA
= 174
°
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
A
= P
(pk)
JA
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMJT9435T1 | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T1G | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T3 | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T3G | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Metallized polyester According to CECC 30401-042, IEC 60384-2, DIN 44122 |
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