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參數(shù)資料
| 型號(hào)： | MMSF7P03HD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 7 A, 30 V, P Channel SO8(7A，30V，P溝道功率MOSFET) |
| 中文描述： | 功率MOSFET 7甲，30五，P通道SO8封裝（第7A，30V的，P溝道功率MOSFET的） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | MMSF7P03HD |
Publication Order Number:
MMSF7P03HD/D
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 7
1
MMSF7P03HD
Preferred Device
Power MOSFET
7 A, 30 V, PChannel SO8
These miniature surface mount devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are DCDC converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives.
Features
Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS
Specified at Elevated Temperature
Mounting Information for SO8 Package Provided
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
30
Vdc
GatetoSource Voltage
Continuous
V
GS
±
20
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Single Pulse (t
p
≤
10 s)
I
D
I
DM
7.0
50
Adc
Apk
Source Current Continuous @ T
A
= 25
°
C
I
S
2.3
Adc
Total Power Dissipation @ T
A
= 25
°
C
(Note 1)
P
D
2.5
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to 150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 30 Vdc, V
GS
= 5.0 Vdc,
V
DS
= 32 Vdc, I
L
= 10 Apk,
L = 10 mH, R
G
= 25 )
E
AS
500
mJ
Thermal Resistance, JunctiontoAmbient
R
JA
50
°
C/W
Maximum Temperature for Soldering
T
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When mounted on 1 in square FR4 or G10 (V
GS
= 10 V @ 10 seconds)
Source
1
2
3
4
8
7
6
5
Top View
Source
Source
Gate
Drain
Drain
Drain
Drain
D
S
G
Device
Package
Shipping
ORDERING INFORMATION
MMSF7P03HDR2
SO8
2500 / Tape&Reel
SO8
CASE 751
STYLE 12
PChannel
MARKING
DIAGRAM
PIN ASSIGNMENT
Preferred
devices are recommended choices for future use
and best overall value.
7 A, 30 V R
DS(on)
= 35 m
http://onsemi.com
S7P03
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
MMSF7P03HDR2G
SO8
(PbFree)
2500 / Tape&Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S7P03
AYWW
1
8
1
8
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